The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Dec. 04, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Chih-Kai Hsu, Tainan, TW;
Ssu-I Fu, Kaohsiung, TW;
Yu-Hsiang Hung, Tainan, TW;
Chun-Ya Chiu, Tainan, TW;
Chin-Hung Chen, Tainan, TW;
Chi-Ting Wu, Tainan, TW;
Yu-Hsiang Lin, New Taipei, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating semiconductor device includes the steps of: forming a first gate structure and a second gate structure on a substrate and an interlayer dielectric (ILD) layer around the first gate structure and the second gate structure; transforming the first gate structure into a first metal gate and the second gate structure into a second metal gate; removing part of the ILD layer between the first metal gate and the second metal gate to form a recess; forming a first spacer and a second spacer in the a recess; performing a first etching process to form a first contact hole; and performing a second etching process to extend the first contact hole into a second contact hole.