The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2019

Filed:

Apr. 17, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Minghao Tang, Ballston Lake, NY (US);

Yuping Ren, Clifton Park, NY (US);

Sean Xuan Lin, Watervliet, NY (US);

Shao Beng Law, Watervliet, NY (US);

Genevieve Beique, Clifton Park, NY (US);

Xun Xiang, Albany, NY (US);

Rui Chen, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/0332 (2013.01); H01L 21/31144 (2013.01); H01L 21/76816 (2013.01);
Abstract

Methods of self-aligned multiple patterning. A mandrel line is formed over a hardmask layer, and forming a block mask is formed over a first portion of the mandrel line that is linearly arranged between respective second portions of the mandrel line. After forming the first block mask, the second portions of the mandrel line are removed with an etching process to cut the mandrel line and expose respective portions of the hardmask layer. A second portion of the mandrel line is covered by the block mask during the etching process to define a mandrel cut in the mandrel line.


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