The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Mar. 03, 2017
Applied Materials, Inc., Santa Clara, CA (US);
Wonseok Lee, Saratoga, CA (US);
Kartik Ramaswamy, San Jose, CA (US);
Ankur Agarwal, Mountain View, CA (US);
Haitao Wang, Sunnyvale, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods and apparatus for boosting ion energies are contemplated herein. In one embodiment, the methods and apparatus comprises a controller, a process chamber with a symmetrical plasma source configured to process a wafer, one or more very high frequency (VHF) sources, coupled to the process chamber, to generate plasma density and two or more frequency generators that generate low frequencies relative to the one or more VHF sources, coupled to a bottom electrode of the process chamber, the two or more low frequency generators configured to dissipate energy in the plasma sheath, wherein the controller controls the one or more VHF sources to generate a VHF signal and the two or more low frequency sources to generate two or more low frequency signals.