The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Dec. 28, 2017
Spin Transfer Technologies, Inc., Fremont, CA (US);
Neal Berger, Cupertino, CA (US);
Benjamin Louie, Fremont, CA (US);
Mourad El Baraji, Fremont, CA (US);
Lester Crudele, Tomball, TX (US);
SPIN MEMORY, INC., Fremont, CA (US);
Abstract
A memory device comprising an array of memory cells wherein each memory cell comprises a respective magnetic random access memory (MRAM) element, a respective gating transistor, and a common wordline coupled to gates of gating transistors of said array of memory cells. The memory device further comprises a common source line coupled to sources of said gating transistors, wherein said common source line is routed perpendicular to said plurality of bit lines within said array of memory cells, and a plurality of bit lines which are routed parallel to each other and connected to the drains of said gating transistors, wherein each bit line is associated with a respective memory cell of said array of memory cells.