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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10394123 B1

PDFFull Text
Date of Patent:
Aug. 27, 2019

Filed:

May. 17, 2017

Blocking layer material composition and methods thereof in semiconductor manufacturing

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Siao-Shan Wang, Tainan, TW;

Chen-Yu Liu, Kaohsiung, TW;

Ching-Yu Chang, Yilang County, TW;

Chin-Hsiang Lin, Hsin-chu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Kathleen Duda

Int. Cl.
CPC ...
G03F 7/09 (2006.01); H01L 21/027 (2006.01); G03F 7/42 (2006.01); G03F 7/039 (2006.01); G03F 7/038 (2006.01); G03F 7/16 (2006.01); G03F 7/095 (2006.01); G03F 7/38 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01);
U.S. Cl.
CPC ...
G03F 7/094 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01); G03F 7/095 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2022 (2013.01); G03F 7/322 (2013.01); G03F 7/327 (2013.01); G03F 7/38 (2013.01); G03F 7/422 (2013.01); H01L 21/0274 (2013.01);
Abstract

The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a material layer over a substrate, wherein the material layer is soluble in a solvent; forming a blocking layer on the material layer; and forming a photoresist layer on the blocking layer, wherein the photoresist layer includes a photosensitive material dissolved in the solvent. The method further includes exposing the photoresist layer; and developing the photoresist layer in a developer.

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