The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Feb. 25, 2015
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Yu-Ying Lin, Tainan, TW;
Ted Ming-Lang Guo, Tainan, TW;
Chin-Cheng Chien, Tainan, TW;
Chih-Chien Liu, Taipei, TW;
Hsin-Kuo Hsu, Kaohsiung, TW;
Chin-Fu Lin, Tainan, TW;
Chun-Yuan Wu, Yun-Lin County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30608 (2013.01); H01L 21/3065 (2013.01); H01L 29/0847 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
An epitaxial process applying light illumination includes the following steps. A substrate is provided. A dry etching process and a wet etching process are performed to form a recess in the substrate, wherein an infrared light illuminates while the wet etching process is performed. An epitaxial structure is formed in the recess.