The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
May. 29, 2018
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Tien-Yu Lu, Taichung, TW;
Chun-Hsien Huang, Tainan, TW;
Ching-Cheng Lung, Tainan, TW;
Yu-Tse Kuo, Tainan, TW;
Shou-Sian Chen, Tainan, TW;
Koji Nii, Tokyo, JP;
Yuichiro Ishii, Tokyo, JP;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/16 (2006.01); G11C 8/08 (2006.01); H01L 27/11 (2006.01); G11C 11/412 (2006.01); G11C 7/12 (2006.01);
U.S. Cl.
CPC ...
G11C 8/16 (2013.01); G11C 7/12 (2013.01); G11C 8/08 (2013.01); G11C 11/412 (2013.01); H01L 27/11 (2013.01);
Abstract
A dual port static random access memory (DPSRAM) cell includes a first power line, a first bit line and a second bit line. The first power line is disposed between a first word line and a second word line. The first bit line is disposed between the first word line and the first power line. The second bit line is disposed between the second word line and the first power line.