The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
May. 21, 2018
International Business Machines Corporation, Armonk, NY (US);
Chi-Chun Liu, Altamont, NY (US);
Muthumanickam Sankarapandian, Niskayuna, NY (US);
Kristin Schmidt, Mountain View, CA (US);
Ekmini Anuja De Silva, Slingerlands, NY (US);
Noel Arellano, Fremont, CA (US);
Robin Hsin Kuo Chao, Cohoes, NY (US);
Chun Wing Yeung, Niskayuna, NY (US);
Zhenxing Bi, Niskayuna, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for manufacturing a semiconductor device includes forming a first nanosheet device and forming a second nanosheet device spaced apart from the first nanosheet device in respective first and second regions corresponding to first and second types. The first and second nanosheet devices respectively include a first and a second plurality of work function metal layers, and a work function metal layer extends from the first and second plurality of work function metal layers in the space between the nanosheet devices. In the method, part of the work function metal layer is removed from the space between the nanosheet devices, and the removed part of the work function metal layer is replaced with a polymer brush layer. The first plurality of work function metal layers is selectively removed from the first region with respect to the polymer brush layer.