The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2019

Filed:

Apr. 30, 2018
Applicant:

Deca Technologies Inc., Tempe, AZ (US);

Inventors:

Christopher M. Scanlan, Chandler, AZ (US);

Timothy L. Olson, Phoenix, AZ (US);

Assignee:

Deca Technologies Inc., Tempe, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/78 (2006.01); H01L 23/48 (2006.01); H01L 21/56 (2006.01); H01L 23/498 (2006.01); H01L 21/768 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 21/304 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/561 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/76877 (2013.01); H01L 23/48 (2013.01); H01L 23/49827 (2013.01); H01L 24/02 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/92 (2013.01); H01L 24/96 (2013.01); H01L 21/304 (2013.01); H01L 23/295 (2013.01); H01L 23/3114 (2013.01); H01L 23/3128 (2013.01); H01L 23/3164 (2013.01); H01L 23/562 (2013.01); H01L 24/03 (2013.01); H01L 24/11 (2013.01); H01L 24/94 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/02377 (2013.01); H01L 2224/03 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05024 (2013.01); H01L 2224/0558 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05669 (2013.01); H01L 2224/05671 (2013.01); H01L 2224/05687 (2013.01); H01L 2224/11 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11452 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11464 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/11901 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/19 (2013.01); H01L 2224/2101 (2013.01); H01L 2224/214 (2013.01); H01L 2224/215 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/92 (2013.01); H01L 2224/94 (2013.01); H01L 2224/95001 (2013.01); H01L 2224/96 (2013.01); H01L 2924/00 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/18162 (2013.01); H01L 2924/3511 (2013.01); Y02P 80/30 (2015.11);
Abstract

A semiconductor device may comprise a semiconductor die comprising an active surface and contact pads disposed. Conductive interconnects comprising first ends may be coupled to the contact pads and second ends may be disposed opposite the first ends. An encapsulant may comprise a planar surface disposed over the active surface of the semiconductor die. The planar surface may be offset from the second surface of the conductive interconnects by a distance greater than or equal to 1 micrometer. A build-up interconnect layer may be disposed over the planar surface and extend into the openings to electrically connect with the conductive interconnects. A method of making the semiconductor device may further comprise grinding a surface of the encapsulant to form the planar surface and the conductive residue across the planar surface. The conductive residue may be etched to remove the conductive residue and to reduce a height of the conductive interconnects.


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