The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2019

Filed:

May. 31, 2017
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Takahiko Kato, Miyagi, JP;

Weiting Chen, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01J 37/32 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67069 (2013.01); C23C 16/45525 (2013.01); H01J 37/32082 (2013.01); H01J 37/32834 (2013.01); H01L 21/02274 (2013.01); H01L 21/31116 (2013.01); H01L 21/67017 (2013.01); H01L 21/6833 (2013.01); H01J 37/3244 (2013.01); H01J 37/32091 (2013.01); H01J 37/32642 (2013.01); H01J 37/32724 (2013.01); H01J 2237/334 (2013.01);
Abstract

A substrate processing method includes a first process of supplying a first gas to a substrate; and a second process of supplying a second gas to the substrate after the first process. When a distance from an edge of the substrate to a boundary between a processing space and a gas exhaust space is L, a cross sectional area of a space orthogonal to a flow of the second gas is S(x), a supply flow rate of the second gas is Q, a pressure within the processing space is P and a diffusion coefficient of the first gas to the second gas is D, at least one of the distance L, the cross sectional area S(x) and the supply flow rate Q in the second process is adjusted such that a Peclet number Pe calculated by expression (3) becomes larger than 1.


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