The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2019

Filed:

May. 31, 2018
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Swaminathan T. Srinivasan, Pleasanton, CA (US);

Atashi Basu, Menlo Park, CA (US);

Pramit Manna, Sunnyvale, CA (US);

Khokan C. Paul, Cupertino, CA (US);

Diwakar N. Kedlaya, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/24 (2006.01); C23C 16/56 (2006.01); H01L 21/3105 (2006.01); C23C 16/30 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02348 (2013.01); C23C 16/24 (2013.01); C23C 16/56 (2013.01); H01L 21/0217 (2013.01); H01L 21/0234 (2013.01); H01L 21/02123 (2013.01); H01L 21/02164 (2013.01); H01L 21/02208 (2013.01); H01L 21/02211 (2013.01); H01L 21/02271 (2013.01); H01L 21/321 (2013.01); H01L 21/6719 (2013.01); H01L 21/67115 (2013.01); H01L 21/67742 (2013.01); H01L 21/67167 (2013.01); H01L 21/67207 (2013.01);
Abstract

In an embodiment, a method includes depositing a silicon matrix on a substrate; exposing the silicon matrix to a first wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber; exposing the silicon matrix to a second wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber, wherein the second wavelength or wavelength range includes a wavelength lower than any wavelength in the first wavelength or wavelength range; exposing the silicon matrix to a third wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber, wherein the third wavelength or wavelength range includes a wavelength lower than any wavelength in the first wavelength or wavelength range and second wavelength or wavelength range; and a repeat exposure of any wavelength range. In some embodiments, a healing operation comprising a deposition operation, a reactive cure, a thermal cure, or a combination thereof may be performed.


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