The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Mar. 25, 2016
Globalfoundries Inc., Grand Cayman, KY;
Vibhor Jain, Essex Junction, VT (US);
Renata Camillo-Castillo, Essex Junction, VT (US);
Qizhi Liu, Lexington, MA (US);
John J. Pekarik, Underhill, VT (US);
Alvin J. Joseph, Williston, VT (US);
Peter B. Gray, Jericho, VT (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Device structures for a bipolar junction transistor and methods for fabricating a device structure using a substrate. One or more primary trench isolation regions are formed that surround an active device region of the substrate and a collector contact region of the substrate. A base layer is formed on the active device region and the collector contact region, and the active device region includes a collector. Each primary trench isolation region extends vertically to a first depth into the substrate. A trench is formed laterally located between the base layer and the collector contact region and that extends vertically through the base layer and into the substrate to a second depth that is less than the first depth. A dielectric is formed in the trench to form a secondary trench isolation region. An emitter is formed on the base layer.