The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Jan. 31, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/76 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 21/311 (2006.01); H01L 27/112 (2006.01); H01L 27/24 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/76802 (2013.01); H01L 21/76816 (2013.01); H01L 21/76831 (2013.01); H01L 21/76844 (2013.01); H01L 21/76846 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/5228 (2013.01); H01L 28/20 (2013.01); H01L 28/60 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 27/10811 (2013.01); H01L 27/11206 (2013.01); H01L 27/2436 (2013.01); H01L 29/785 (2013.01);
Abstract
The present disclosure provides a method of fabricating an integrated circuit in accordance with some embodiments. The method includes forming a source and a drain on a fin active region of a semiconductor substrate; depositing an interlayer dielectric (ILD) layer on the source and drain; patterning the ILD layer to form a first contact hole and a second contact hole aligning with the source and drain, respectively; forming a dielectric material layer in the first contact hole; and forming a first conductive feature and a second conductive feature in the first and second contact holes, respectively.