logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10366963 B1

PDFFull Text
Date of Patent:
Jul. 30, 2019

Filed:

Nov. 28, 2016

Noble metal paste for bonding of semiconductor element

Applicant:

Tanaka Kikinzoku Kogyo K. K., Tokyo, JP;

Inventors:

Masayuki Miyairi, Hiratsuka, JP;

Nobuyuki Akiyama, Hiratsuka, JP;

Katsuji Inagaki, Hiratsuka, JP;

Toshinori Ogashiwa, Hiratsuka, JP;

Assignee:

TANAKA KIKINZOKU KOGYO K. K., Tokyo, JP;

Attorney:

Roberts & Roberts, LLP

Primary Examiner:

Erin B Saad

Int. Cl.
CPC ...
B23K 35/00 (2006.01); B23K 1/00 (2006.01); H01L 23/00 (2006.01); C09K 5/14 (2006.01); H01L 21/50 (2006.01); B23K 35/02 (2006.01); B23K 35/36 (2006.01); B23K 35/30 (2006.01); B23K 101/40 (2006.01);
U.S. Cl.
CPC ...
H01L 24/29 (2013.01); B23K 1/0016 (2013.01); B23K 35/025 (2013.01); B23K 35/3013 (2013.01); B23K 35/3612 (2013.01); C09K 5/14 (2013.01); H01L 21/50 (2013.01); B23K 2101/40 (2018.08); H01L 2224/2929 (2013.01); H01L 2224/29339 (2013.01); H01L 2224/29344 (2013.01);
Abstract

A precious metal paste which does not cause contamination of a member, which can be uniformly coated to a member to be bonded, and which is in good condition after bonding is provided. The present invention relates to a precious metal paste for bonding a semiconductor element, of the paste including a precious metal powder and an organic solvent, in which the precious metal powder has a purity of 99.9 mass % or more and an average particle diameter of 0.1 to 0.5 μm, the organic solvent has a boiling point of 200 to 350° C., and a thixotropy index (TI) value calculated from a measurement value of a viscosity at a shear rate of 4/s with respect to a viscosity at a shear rate of 40/s at 23° C. by means of a rotational viscometer is 6.0 or more.

Find Patent Forward Citations

Miyairi, Masayuki. (2019). Noble metal paste for bonding of semiconductor element (U.S. Patent No. 10366963). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10366963

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…