The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 30, 2019

Filed:

Feb. 22, 2017
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Alok Ranjan, Tomiya, JP;

Vinayak Rastogi, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31138 (2013.01); H01L 21/02252 (2013.01); H01L 21/3081 (2013.01); H01L 21/30655 (2013.01); H01L 21/31144 (2013.01);
Abstract

Methods and systems for cyclic etching of a patterned layer are described. In an embodiment, a method includes receiving a substrate comprising an underlying layer, a mask layer that exposes portions of an intermediate layer that is disposed between the underlying layer and the mask layer. An embodiment may also include forming a first layer on the mask layer and a second layer on the exposed portions of the intermediate layer, the first layer and the second layer being concurrently formed. Additionally, the method may include removing, concurrently, the first layer and the second layer from the substrate. In such embodiments, the method may include alternating between the forming and the removing until portions of the underlying layer are exposed.


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