The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Mar. 06, 2017
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Eric Freeman, Kuna, ID (US);
Paolo Tessariol, Arcore, IT;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 49/02 (2006.01); H01L 23/522 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 21/31111 (2013.01); H01L 23/5223 (2013.01); H01L 27/11582 (2013.01); H01L 28/60 (2013.01); H01L 28/86 (2013.01); H01L 28/90 (2013.01);
Abstract
Some embodiments include an integrated structure having a semiconductor base and an insulative frame over the semiconductor base. The insulative frame has vertically-spaced sheets of first insulative material, and pillars of second insulative material between the vertically-spaced sheets. The first and second insulative materials are different from one another. Conductive plates are between the vertically-spaced sheets and are directly against the insulative pillars. Some embodiments include capacitors, and some embodiments include methods of forming capacitors.