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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10361213 B1

PDFFull Text
Date of Patent:
Jul. 23, 2019

Filed:

Apr. 10, 2017

Three dimensional memory device containing multilayer wordline barrier films and method of making thereof

Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventors:

Rahul Sharangpani, Fremont, CA (US);

Fumitaka Amano, Yokkaichi, JP;

Raghuveer S. Makala, Campbell, CA (US);

Fei Zhou, Milpitas, CA (US);

Keerti Shukla, Saratoga, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:

The Marbury Law Group PLLC

Primary Examiner:

William F Kraig

Assistant Examiner:

Khatib A Rahman

Int. Cl.
CPC ...
H01L 27/11524 (2017.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 27/1157 (2017.01); H01L 21/28 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 21/28282 (2013.01); H01L 21/76847 (2013.01); H01L 23/53266 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11582 (2013.01); H01L 29/7926 (2013.01);
Abstract

Memory stack structures are formed through an alternating stack of insulating layers and sacrificial material layers. Backside recesses are formed by removal of the sacrificial material layers selective to the insulating layers and the memory stack structures. A barrier layer stack including a crystalline electrically conductive barrier layer and an amorphous barrier layer is formed in the backside recesses prior to formation of a metal fill material layer.

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Sharangpani, Rahul. (2019). Three dimensional memory device containing multilayer wordline barrier films and method of making thereof (U.S. Patent No. 10361213). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10361213

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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