The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2019
Filed:
Aug. 03, 2017
International Business Machines Corporation, Armonk, NY (US);
Injo Ok, Loudonville, NY (US);
Balasubramanian Pranatharthiharan, Watervliet, NY (US);
Soon-Cheon Seo, Glenmont, NY (US);
Charan V. V. S. Surisetty, Clifton Park, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure includes a first layered dipole structure formed within a gate trench within a first polarity region of the semiconductor structure. A second layered dipole structure is formed within a gate trench within a second polarity region of the semiconductor structure and formed upon the first layered dipole structure. The layered dipole structure nearest to the bottom of the gate trench includes a dipole layer of opposite polarity relative to the polarity region of the semiconductor structure where the gate trench is located and reduces source to drain leakage.