The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2019

Filed:

Jan. 22, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Taku Gohira, Miyagi, JP;

Jin Kudo, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32724 (2013.01); H01J 37/3244 (2013.01); H01J 37/32697 (2013.01); H01L 21/67069 (2013.01); H01L 21/67103 (2013.01); H01L 21/6833 (2013.01); H01J 2237/002 (2013.01); H01J 2237/022 (2013.01);
Abstract

A deposit on a target object can be removed or the amount thereof can be reduced after plasma etching is completed and before the target object is carried out of a chamber. A method of processing the target object is provided. The method includes etching including a main etching of etching an etching target film of the target object placed on a stage at a low temperature by generating plasma of a processing gas containing a fluorocarbon gas and/or a hydrofluorocarbon gas; raising, immediately after the etching is performed or immediately after the main etching is performed, a temperature of an electrostatic chuck; and carrying-out the target object from the chamber in a state that the temperature of the electrostatic chuck is set to a high temperature.


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