The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2019

Filed:

Aug. 31, 2017
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Tyson M. Stichka, Boise, ID (US);

Preston Thomson, Boise, ID (US);

Scott Anthony Stoller, Boise, ID (US);

Christopher Bueb, Folsom, CA (US);

Jianmin Huang, San Carlos, CA (US);

Kulachet Tanpairoj, Santa Clara, CA (US);

Harish Singidi, Fremont, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 5/00 (2006.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 7/04 (2006.01);
U.S. Cl.
CPC ...
G11C 5/005 (2013.01); G11C 7/04 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); G11C 16/06 (2013.01);
Abstract

Devices and techniques for NAND cell encoding to improve data integrity are disclosed herein. A high-temperature indicator is obtained and a write operation is received. The write operation is then performed on a NAND cell using a modified encoding in response to the high-temperature indicator. The modified encoding includes a reduced number of voltage distribution positions from an unmodified encoding without changing voltage distribution widths, where each voltage distribution corresponds to a discrete set of states an encoding.


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