The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Jul. 08, 2016
International Business Machines Corporation, Armonk, NY (US);
Injo Ok, Loudonville, NY (US);
Balasubramanian Pranatharthiharan, Watervliet, NY (US);
Soon-Cheon Seo, Glenmont, NY (US);
Charan V. V. S. Surisetty, Clifton Park, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure including one or more semiconductor devices on a wafer. The one or more devices having source/drain junctions. The semiconductor structure further includes a recessed middle-of-line (MOL) oxide layer, and an air-gap oxide layer including one or more introduced air-gaps. The air-gap oxide layer is positioned over the one or more semiconductor devices and the MOL oxide layer. A nitride layer is positioned over the one or more semiconductor devices. Trenches are formed through the nitride layer down to the source/drain junctions. A silicide fills the trenches.