The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Dec. 29, 2017
Spin Memory, Inc.;
Gian Sharma, Fremont, CA (US);
Amitay Levi, Cupertino, CA (US);
Andrew J. Walker, Mountain View, CA (US);
Kuk-Hwan Kim, San Jose, CA (US);
Dafna Beery, Palo Alto, CA (US);
SPIN MEMORY, INC., Fremont, CA (US);
Abstract
A method, according to one embodiment, includes: forming an annular cylindrical channel from a single block of electrically conductive material; forming an oxide layer over exposed surfaces of the annular cylindrical channel and exposed surfaces of the block of electrically conductive material; removing a portion of the oxide layer from an exterior base of the annular cylindrical channel, thereby forming a source contact recess which surrounds the base of the annular cylindrical channel; ion-implanting the exposed electrically conductive material substrate at a base of the source contact recess; and depositing a silicide material in the source contact recess, thereby forming a source contact tab. Moreover, other systems and methods are also described in additional embodiments herein which provide various different improved processes of forming the annular cylindrical channels, the source contact tabs, and/or the cylindrical pillar gate contacts for vertical transistor structures in comparison to conventional surface transistor structures.