The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Aug. 10, 2017
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Yu-Lien Huang, Hsinchu County, TW;
Chi-Kang Liu, Taipei, TW;
Yung-Ta Li, Kaohsiung, TW;
Chun-Hsiang Fan, Taoyuan, TW;
Tung-Ying Lee, Hsinchu, TW;
Clement Hsing-Jen Wann, Carmel, NY (US);
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
Devices are described herein that include a first fin structure formed on a substrate. A second fin structure formed on the substrate. One or more gate structures are formed on the first fin structure and the second fin structure. A first in-fin source/drain region is associated with a first volume and is disposed between the first fin structure and the second fin structure. A fin-end source/drain region is associated with a second volume larger than the first volume, the first fin structure being disposed between the first in-fin source/drain region and the fin-end source/drain region. The gate structures, the first in-fin source/drain region, and the fin-end source/drain region are configured to form one or more transistors.