The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
May. 16, 2018
Micron Technology, Inc., Boise, ID (US);
Daniel Billingsley, Meridian, ID (US);
Everett A. McTeer, Eagle, ID (US);
Christopher W. Petz, Boise, ID (US);
Haoyu Li, Boise, ID (US);
John Mark Meldrim, Boise, ID (US);
Yongjun Jeff Hu, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
An integrated assembly having an insulative mass with a first region adjacent to a second region. The first region has a greater amount of one or more inert interstitial elements incorporated therein than does the second region. Also, an integrated assembly which has vertically-extending channel material pillars, and which has memory cells along the channel material pillars. A conductive structure is under the channel material pillars. The conductive structure includes doped semiconductor material in direct contact with bottom regions of the channel material pillars. An insulative mass is along the bottom regions of the channel material pillars. The insulative mass has an upper region over a lower region. The lower region has a greater amount of one or more inert interstitial elements incorporated therein than does the upper region. Also, methods of forming integrated assemblies.