The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Oct. 30, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Hidehiro Fujiwara, Hsinchu, TW;
Li-Wen Wang, Taichung, TW;
Yen-Huei Chen, Jhudong Township, TW;
Hung-Jen Liao, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); G06F 17/50 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); G06F 17/5077 (2013.01); H01L 23/5226 (2013.01); H01L 27/0207 (2013.01); H01L 27/1104 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A memory cell comprises a first word line in a first layer on a first level. The memory cell also comprises a second word line having a first portion in the first layer and a second portion in a second layer. The second layer is on a second level different from the first level. The memory cell further comprises a first via layer coupling the first portion of the second word line with the second portion of the second word line.