The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
May. 31, 2017
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Yen-Chun Huang, New Taipei, TW;
Bang-Tai Tang, New Taipei, TW;
Chih-Tang Peng, Zhubei, TW;
Tai-Chun Huang, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 27/088 (2006.01); H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823481 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/02348 (2013.01); H01L 21/823431 (2013.01); H01L 27/088 (2013.01);
Abstract
A method includes performing an atomic layer deposition (ALD) process to deposit a dielectric material over a substrate, curing the deposited dielectric material using an ultra violet (UV) light, and annealing the deposited dielectric material after the curing.