The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Dec. 27, 2017
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ekmini Anuja De Silva, Slingerlands, NY (US);
Indira Seshadri, Niskayuna, NY (US);
Romain Lallement, Troy, NY (US);
Nelson Felix, Slingerlands, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/324 (2006.01); H01L 21/8238 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 29/32 (2006.01); H01L 21/8234 (2006.01); H01L 21/266 (2006.01); H01L 21/311 (2006.01); H01L 21/3105 (2006.01); H01L 21/308 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/3081 (2013.01); H01L 21/31058 (2013.01); H01L 21/31111 (2013.01); H01L 21/823418 (2013.01); H01L 21/3065 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01);
Abstract
Semiconductor devices and methods of forming the same include forming a wet-strippable hardmask over semiconductor fins. The wet-strippable hardmask is anisotropically etched away in a first device region. At least one semiconductor fin is doped in the first device region. The wet-strippable hardmask is isotropically etched away in a second device region. Semiconductor devices are formed from the fins in the first and second device regions.