The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Oct. 17, 2016
Air Water Inc., Chuo-ku, Sapporo-shi, Hokkaido, JP;
Mitsuhisa Narukawa, Nagano, JP;
Akira Fukazawa, Nagano, JP;
Hiroki Suzuki, Nagano, JP;
Keisuke Kawamura, Nagano, JP;
Air Water Inc., Hokkaido, JP;
Abstract
A compound semiconductor substrate having a desired quality is provided. A compound semiconductor substrate has an SiC (silicon carbide) layer, an AlN (aluminum nitride) buffer layer formed on the SiC layer, an Al (aluminum) nitride semiconductor layer formed on the AlN buffer layer, a first GaN (gallium nitride) layer formed on the Al nitride semiconductor layer, a first AlN intermediate layer formed on the first GaN layer in contact with the first GaN layer, and a second GaN layer formed on the first AlN intermediate layer in contact with the first AlN intermediate layer.