The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2019

Filed:

Nov. 28, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Vineet Sharma, Mechanicville, NY (US);

Sohan S. Mehta, Saratoga Springs, NY (US);

Craig D. Higgins, Altamont, NY (US);

Sunil K. Singh, Mechanicville, NY (US);

Feng Wang, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/42 (2006.01); G03F 7/26 (2006.01); G03F 7/00 (2006.01); G03F 7/38 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0035 (2013.01); G03F 7/38 (2013.01);
Abstract

A litho-litho-etch double patterning method including forming a resist layer by coating a substrate with a resist composition; exposing the resist layer to a first radiant energy density of UV rays; forming a first pattern in the resist layer by developing the resist layer with a positive developer; exposing the resist layer to a second radiant energy density of UV rays; and forming a second pattern in the resist layer by developing the resist layer with a negative developer, the second pattern including one or more features of the first pattern.


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