The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2019

Filed:

Dec. 16, 2015
Applicant:

Hitachi High-technologies Corporation, Tokyo, JP;

Inventors:

Toshiyuki Nakao, Tokyo, JP;

Yuta Urano, Tokyo, JP;

Kaifeng Zhang, Tokyo, JP;

Hideaki Sasazawa, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 23/04 (2018.01); G01N 23/18 (2018.01); G01N 23/083 (2018.01); G01N 23/044 (2018.01);
U.S. Cl.
CPC ...
G01N 23/04 (2013.01); G01N 23/044 (2018.02); G01N 23/083 (2013.01); G01N 23/18 (2013.01); G01N 2223/3306 (2013.01); G01N 2223/401 (2013.01); G01N 2223/408 (2013.01); G01N 2223/6116 (2013.01); G01N 2223/646 (2013.01); G01N 2223/6462 (2013.01);
Abstract

A method including inspecting, using an X-ray transmission image, internal defects in a TSV formed in a semiconductor wafer, and detecting the X-rays, and processing an X-ray transmission image. Therein, the detection of X-rays is configured such that: the detection azimuth of the X-rays, and the detection elevation angle of the X-rays relative to the X-ray source are determined on the basis of information on the arrangement interval, depth, and planar shape of structures formed in the sample. The angle of rotation of a rotating stage on which the sample is mounted is adjusted in accordance with the detection azimuth which has been determined, and the X-rays that have been transmitted through the sample are detected with the position of the detector set to the detection elevation angle which has been determined.


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