The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2019

Filed:

Feb. 26, 2018
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Qiang Tang, Cupertino, CA (US);

Xiaojiang Guo, San Jose, CA (US);

Chang Wan Ha, San Ramon, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); H04L 25/02 (2006.01); G06F 13/40 (2006.01); G11C 5/04 (2006.01); G11C 29/02 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
H04L 25/0278 (2013.01); G06F 13/4086 (2013.01); G11C 5/04 (2013.01); G11C 29/025 (2013.01); G11C 29/028 (2013.01); G11C 29/50008 (2013.01);
Abstract

Methods of operating integrated circuit devices include generating a voltage level at a particular node in response to a first voltage level applied to a termination device and a second voltage level applied to a reference resistance; determining whether a plurality of available resistance values of the termination device satisfy a criterion that each available resistance value is either less than a resistance value of the reference resistance, or each available resistance value is greater than the resistance value of the reference resistance; and, when the plurality of available resistance values of the termination device satisfy the criterion, determining whether a voltage level generated at the particular node for a particular available resistance value of the plurality of available resistance values is between a voltage level of a first reference voltage and a voltage level of a second reference voltage.


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