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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10347761 B1

PDFFull Text
Date of Patent:
Jul. 09, 2019

Filed:

Nov. 24, 2017

Tunneling field effect transistor and method for fabricating the same

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chun-Hao Lin, Kaohsiung, TW;

Chun-Jung Tang, Tainan, TW;

Hsin-Yu Chen, Nantou County, TW;

Shou-Wei Hsieh, Hsinchu, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Lex H Malsawma

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 21/762 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/165 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7846 (2013.01); H01L 21/76224 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/42356 (2013.01); H01L 29/7831 (2013.01); H01L 29/165 (2013.01); H01L 29/167 (2013.01); H01L 29/6656 (2013.01); H01L 29/66484 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01);
Abstract

A tunnel field effect transistor (TFET) includes: a first gate structure on a substrate; a source region having a first conductive type on one side of the first gate structure; a drain region having a second conductive type on another side of the first gate structure; a first isolation structure adjacent to the source region; and a second isolation structure adjacent to the drain region. Preferably, the first isolation and the second isolation comprise different material and different depths or same material and different depths.

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