The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Aug. 01, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Ya-Ying Tsai, Tainan, TW;
Keng-Jen Lin, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Abstract
The invention provides a manufacturing method of a semiconductor device. First, a substrate is provided. A first recess and a second recess are formed in the substrate, a width of the first recess is smaller than a width of the second recess. Then, a first spin-on dielectric (SOD) layer is formed to fill the first recess and partially fill in the second recess, and then a first processing step is performed to transfer the first SOD layer into a first silicon oxide layer, a silicon nitride layer is subsequently formed on the first silicon oxide layer in the second recess, and then a second spin-on dielectric (SOD) layer is formed on the silicon nitride layer in the second recess, and a second processing step is performed to transfer the second SOD layer into a second silicon oxide layer.