The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
Feb. 28, 2018
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Stephan Voss, Munich, DE;
Roman Baburske, Otterfing, DE;
Thomas Basler, Riemerling, DE;
Thomas Kimmer, Poertschach, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/18 (2006.01); H01L 27/02 (2006.01); H01L 29/739 (2006.01); H01L 23/495 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 27/08 (2006.01); H01L 23/62 (2006.01); H01L 29/40 (2006.01); H01L 29/861 (2006.01); H01L 27/06 (2006.01); H01L 27/07 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 23/4952 (2013.01); H01L 23/49562 (2013.01); H01L 23/62 (2013.01); H01L 25/18 (2013.01); H01L 27/0255 (2013.01); H01L 27/0814 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0834 (2013.01); H01L 29/7395 (2013.01); H01L 27/0694 (2013.01); H01L 27/0727 (2013.01); H01L 29/402 (2013.01); H01L 29/861 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/49113 (2013.01);
Abstract
Semiconductor device is provided with a semiconductor body that includes a clamping structure including a first pn junction diode and a second pn junction diode serially connected back to back between a first contact and a second contact. A breakdown voltage of the first pn junction diode is greater than 100 V, and a breakdown voltage of the second pn junction diode is greater than 10 V.