The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2019

Filed:

Aug. 26, 2015
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Chen-Guan Lee, Portland, OR (US);

Vadym Kapinus, Hillsboro, OR (US);

Pei-Chi Liu, Portland, OR (US);

Joodong Park, Portland, OR (US);

Walid M. Hafez, Portland, OR (US);

Chia-Hong Jan, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01); H01L 29/78 (2006.01); H01L 21/86 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5228 (2013.01); H01L 21/86 (2013.01); H01L 27/0629 (2013.01); H01L 28/00 (2013.01); H01L 28/22 (2013.01); H01L 29/785 (2013.01); H01L 29/78657 (2013.01); H01L 28/24 (2013.01);
Abstract

IC device structures including a lateral compound resistor disposed over a surface of a substrate, and fabrication techniques to form such a resistor in conjunction with fabrication of a transistor. Rather than being stacked vertically, a compound resistive trace may include a plurality of resistive materials arranged laterally over a substrate. Along a resistive trace length, a first resistive material is in contact with a sidewall of a second resistive material. A portion of a first resistive material along a centerline of the resistive trace may be replaced with a second resistive material so that the second resistive material is embedded within the first resistive material.


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