The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
Nov. 28, 2017
Applicant:
Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;
Inventors:
Chih Cheng Lee, Kaohsiung, TW;
Yu-Lin Shih, Kaohsiung, TW;
Assignee:
ADVANCED SEMICONDUCTOR ENGINEERING, INC., Kaohsiung, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/49 (2006.01); H01L 23/36 (2006.01); H01L 23/495 (2006.01); H01L 23/42 (2006.01); H01L 23/367 (2006.01); H01L 21/56 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49568 (2013.01); H01L 21/568 (2013.01); H01L 23/3677 (2013.01); H01L 23/42 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2924/181 (2013.01);
Abstract
A semiconductor substrate includes a dielectric layer, a heat dissipation structure and a first patterned conductive layer. The dielectric layer has a surface. The heat dissipation structure is surrounded by the dielectric layer. The heat dissipation structure defines a space and includes a liquid in the space. The first patterned conductive layer is disposed adjacent to the surface of the dielectric layer and thermally connected with the heat dissipation structure.