The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2019

Filed:

Feb. 25, 2016
Applicant:

Freescale Semiconductor, Inc., Austin, TX (US);

Inventors:

Qing Zhang, Montreal, CA;

Mohommad Choudhuri, Brossard, CA;

Gul Zeb, Montreal, CA;

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 27/085 (2006.01); B81B 7/00 (2006.01); B81C 1/00 (2006.01); G01N 27/22 (2006.01);
U.S. Cl.
CPC ...
B81B 7/008 (2013.01); B81C 1/00246 (2013.01); G01N 27/223 (2013.01); B81B 2201/0214 (2013.01); B81B 2207/015 (2013.01); B81B 2207/07 (2013.01); B81C 2201/016 (2013.01); B81C 2201/019 (2013.01); B81C 2201/0159 (2013.01);
Abstract

A semiconductor device composed of a capacitive humidity sensor comprised of a moisture-sensitive polymer layer electrografted to an electrically conductive metal layer situated on an CMOS substrate or a combined MEMS and CMOS substrate, and exposed within an opening through a passivation layer, packages composed of the encapsulated device, and methods of forming the capacitive humidity sensor within the semiconductor device, are provided.


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