The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
May. 08, 2018
Globalfoundries Inc., Grand Cayman, KY;
Ruilong Xie, Schenectady, NY (US);
Edward J. Nowak, Shelburne, VT (US);
Bipul C. Paul, Mechanicville, NY (US);
Steven R. Soss, Cornwall, NY (US);
Julien Frougier, Albany, NY (US);
Daniel Chanemougame, Niskayuna, NY (US);
Lars W. Liebmann, Mechanicville, NY (US);
GLOBALFOUNDARIES INC., Grand Cayman, KY;
Abstract
Various embodiments relate to gate-all-around (GAA) transistors and methods of forming such transistors. In some embodiments, a method performed on a precursor structure includes selectively removing a sacrificial nanosheet to open a vertical gap between a pair of semiconductor nanosheets; forming a first work function metal to surround the precursor nanosheet stack and fin, the first work function metal filling the vertical gap between the pair of semiconductor nano sheets; selectively removing first work function metal surrounding the fin while preserving an entirety of first work function metal surrounding the nanosheet stack; and forming a second work function metal: over a remaining portion of the first work function metal on nanosheet stack, and surrounding the fin, where first work function metal includes a different material than second work function metal.