The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Jun. 12, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Wen-Che Tsai, Hsinchu, TW;
Min-Yann Hsieh, Kaohsiung, TW;
Hua-Feng Chen, Hsinchu, TW;
Kuo-Hua Pan, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor device includes forming a gate stack over a substrate; forming an interlayer dielectric over the substrate to cover the gate stack; forming an opening in the interlayer dielectric to expose to the gate stack; forming a glue layer over the interlayer dielectric and in the opening; partially removing the glue layer, in which a portion of the glue layer remain in the opening; and tuning a profile of the remained portion of the glue layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile