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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10332648 B1

PDFFull Text
Date of Patent:
Jun. 25, 2019

Filed:

Oct. 13, 2017

Charge stripping film for charge stripping device of ion beam

Applicants:

Kaneka Corporation, Osaka, JP;

Riken, Saitama, JP;

Inventors:

Mutsuaki Murakami, Osaka, JP;

Masamitsu Tachibana, Osaka, JP;

Atsushi Tatami, Osaka, JP;

Hiroo Hasebe, Saitama, JP;

Assignees:

KANEKA CORPORATION, Osaka, JP;

RIKEN, Saitama, JP;

Attorney:

Osha Liang LLP

Primary Examiner:

Nicole M Ippolito

Assistant Examiner:

Hanway Chang

Int. Cl.
CPC ...
B29D 7/01 (2006.01); B32B 5/14 (2006.01); B32B 9/00 (2006.01); B32B 9/04 (2006.01); G21K 1/00 (2006.01); G21K 1/14 (2006.01); H05H 7/00 (2006.01); H05H 7/08 (2006.01); B29C 71/02 (2006.01); B32B 15/00 (2006.01); B32B 33/00 (2006.01); C01B 32/05 (2017.01); H01J 27/02 (2006.01); H05H 13/04 (2006.01);
U.S. Cl.
CPC ...
G21K 1/14 (2013.01); B29D 7/01 (2013.01); B32B 5/14 (2013.01); B32B 9/007 (2013.01); B32B 9/041 (2013.01); B32B 15/00 (2013.01); B32B 33/00 (2013.01); C08J 7/08 (2013.01); H01J 27/022 (2013.01); H05H 7/00 (2013.01); B32B 2307/302 (2013.01); B32B 2307/718 (2013.01); B32B 2313/04 (2013.01); C01B 32/05 (2017.08); C08J 2333/24 (2013.01); C08J 2337/00 (2013.01); C08J 2339/00 (2013.01); G21K 1/00 (2013.01); H01J 2237/004 (2013.01); H05H 7/08 (2013.01); H05H 13/04 (2013.01); H05H 2007/005 (2013.01); H05H 2007/088 (2013.01);
Abstract

A charge stripping film for a charge stripping device of ion beam is a carbon film produced by annealing a polymer film, and has a film thickness of 10 μm to 150 μm, an area of at least 4 cm, and an atomic concentration of carbon of at least 97%. A charge stripping film for a charge stripping device of ion beam is a carbon film having a thermal conductivity in a film surface direction at 25° C. of at least 300 W/mK, and has a film thickness of 10 μm to 150 μm, an area of at least 4 cm, and an atomic concentration of carbon of at least 97%.

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