The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
Oct. 04, 2017
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Hans-Joachim Schulze, Taufkirchen, DE;
Franz Hirler, Isen, DE;
Anton Mauder, Kolbermoor, DE;
Helmut Strack, Munich, DE;
Frank Kahlmann, Neubiberg, DE;
Gerhard Miller, Penzing, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/22 (2006.01); H01L 29/66 (2006.01); H01L 29/36 (2006.01); H01L 29/739 (2006.01); H01L 29/74 (2006.01); H01L 21/265 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/167 (2006.01); H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66348 (2013.01); H01L 21/2658 (2013.01); H01L 29/0878 (2013.01); H01L 29/102 (2013.01); H01L 29/1095 (2013.01); H01L 29/167 (2013.01); H01L 29/36 (2013.01); H01L 29/7397 (2013.01); H01L 29/7428 (2013.01); H01L 29/7802 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/7816 (2013.01); H01L 29/861 (2013.01); H01L 29/872 (2013.01); H01L 21/2205 (2013.01); H01L 29/0619 (2013.01); H01L 29/0634 (2013.01); H01L 29/0638 (2013.01); H01L 29/165 (2013.01); H01L 29/402 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01);
Abstract
A semiconductor device is produced by providing a semiconductor substrate, forming an epitaxial layer on the semiconductor substrate, and introducing dopant atoms of a first doping type and dopant atoms of a second doping type into the epitaxial layer.