The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
Mar. 20, 2017
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Sanh D. Tang, Kuna, ID (US);
Ming Zhang, Fremont, CA (US);
Andrew M. Bayless, Boise, ID (US);
John K. Zahurak, Eagle, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 27/24 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 21/306 (2006.01); H01L 21/762 (2006.01); H01L 27/102 (2006.01); H01L 27/108 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1203 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/30604 (2013.01); H01L 21/76251 (2013.01); H01L 21/76254 (2013.01); H01L 21/84 (2013.01); H01L 27/1021 (2013.01); H01L 27/10802 (2013.01); H01L 27/12 (2013.01); H01L 27/24 (2013.01); H01L 29/04 (2013.01); H01L 29/16 (2013.01); H01L 29/7841 (2013.01); H01L 29/78603 (2013.01); H01L 29/78642 (2013.01); H01L 29/78645 (2013.01); H01L 29/78648 (2013.01);
Abstract
Methods for fabricating semiconductor-metal-on-insulator (SMOI) structures include forming an acceptor wafer including an insulator material on a first semiconductor substrate, forming a donor wafer including a conductive material and an amorphous silicon material on a second semiconductor substrate, and bonding the amorphous silicon material of the donor wafer to the insulator material of the acceptor wafer. SMOI structures formed from such methods are also disclosed, as are semiconductor devices including such SMOI structures.