The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
Dec. 05, 2017
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/02282 (2013.01); H01L 21/02321 (2013.01); H01L 21/02337 (2013.01); H01L 21/02359 (2013.01); H01L 21/31111 (2013.01); H01L 21/31138 (2013.01); H01L 21/76802 (2013.01); H01L 21/76832 (2013.01); H01L 23/5329 (2013.01);
Abstract
There is provided a method of manufacturing a semiconductor device, which includes: supplying a raw material for polymerization to a porous low dielectric constant film formed on a substrate for manufacturing a semiconductor device, and filling holes formed in the porous low dielectric constant film with a polymer having a urea bond; subsequently, forming a pattern mask for etching on a surface of the porous low dielectric constant film; subsequently, etching the porous low dielectric constant film; subsequently, removing the pattern mask; and heating the substrate to depolymerize the polymer.