The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2019

Filed:

Jan. 12, 2018
Applicant:

Carl Zeiss Smt Gmbh, Oberkochen, DE;

Inventors:

Stig Bieling, Aalen, DE;

Helmut Haidner, Aalen, DE;

Assignee:

CARL ZEISS SMT GMBH, Oberkochen, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/706 (2013.01); G03F 7/702 (2013.01); G03F 7/7085 (2013.01); G03F 7/70133 (2013.01); G03F 7/70158 (2013.01); G03F 7/70208 (2013.01);
Abstract

A microlithographic projection exposure apparatus () includes a projection lens () that images an object field () arranged in a mask plane () onto a substrate () during exposure operation of the projection exposure apparatus, and an illumination system () that has: an exposure illumination beam path () for radiating illumination radiation () onto the object field on the illumination side with respect to the mask plane, a measurement illumination beam path () for irradiating a measurement structure () arranged in the mask plane with the illumination radiation, and a scattering structure () arranged on the illumination side with respect to the mask plane and outside the exposure illumination beam path. The measurement illumination beam path extends via the scattering structure and runs rectilinearly between the scattering structure and the mask plane.


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