The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Sep. 15, 2017
Globalfoundries Inc., Grand Cayman, KY;
Ruilong Xie, Schenectady, NY (US);
Steven Bentley, Menands, NY (US);
Puneet Harischandra Suvarna, Menands, NY (US);
Chanro Park, Clifton Park, NY (US);
Min Gyu Sung, Latham, NY (US);
Lars Liebmann, Mechanicville, NY (US);
Su Chen Fan, Cohoes, NY (US);
Brent Anderson, Essex Junction, VT (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A vertical FinFET includes a semiconductor fin formed over a semiconductor substrate. A self-aligned first source/drain contact is electrically separated from a second source/drain contact by a spacer layer that is formed over an endwall of the fin. The spacer layer, which comprises a dielectric material, allows the self-aligned first source/drain contact to be located in close proximity to an endwall of the fin and the associated second source/drain contact without risk of an electrical short between the adjacent contacts.