The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2019
Filed:
Aug. 01, 2017
Applicant:
Tokyo Electron Limited, Minato-ku, Tokyo,, JP;
Inventors:
Xinghua Sun, Clifton Park, NY (US);
Takashi Yamamura, Watervliet, NY (US);
Hiroyuki Nagai, Nirasaki, JP;
Ryuichi Asako, Nirasaki, JP;
Katie Lutker-Lee, Niskayuna, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76808 (2013.01); H01L 21/0228 (2013.01); H01L 21/02063 (2013.01); H01L 21/02164 (2013.01); H01L 21/76814 (2013.01); H01L 21/76816 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/53228 (2013.01); H01L 23/53295 (2013.01); H01L 2221/1026 (2013.01);
Abstract
Embodiments are disclosed for processing microelectronic workpieces having patterned structures that include ultra-low dielectric constant (k) (ULK) material layers. In particular, embodiments are disclosed that deposit protective layers to protect ULK features during etch processing of patterned structures within substrates for microelectronic workpieces. For certain embodiments, these protective layers are deposited in-situ within the etch chamber.