The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2019

Filed:

Dec. 22, 2017
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Chih-Hsiung Lee, Hsinchu, TW;

Tzung-Ting Han, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 27/11524 (2017.01); H01L 27/11529 (2017.01); H01L 27/11531 (2017.01); H01L 29/788 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 21/027 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); H01L 21/0273 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/28273 (2013.01); H01L 21/76224 (2013.01); H01L 27/11524 (2013.01); H01L 27/11529 (2013.01); H01L 27/11531 (2013.01); H01L 29/0649 (2013.01); H01L 29/66825 (2013.01); H01L 29/7883 (2013.01);
Abstract

Methods of fabricating semiconductor devices having patterns with different feature sizes are provided. An example method includes: etching a first film layer below a patterned mask to form first and second features on a second film layer, forming respective first and second spacers adjacent to sidewalls of the first and second features on the second film layer, removing the first and second features to expose respective first and second portion of the second film layer, the second portion having a larger CD than the first portion, controlling an etching process such that the first portion is etched through and the second portion is protected from etching by a protective film formed during the etching process, and patterning a thin film masked by the first spacer, the second spacer, and the second portion to form smaller features and larger features in respective first and second regions of the thin film.


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