The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2019

Filed:

Jan. 22, 2018
Applicants:

United Microelectronics Corp., Hsin-Chu, TW;

Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;

Inventors:

Chieh-Te Chen, Kaohsiung, TW;

Hsien-Shih Chu, Kaohsiung, TW;

Cheng-Yu Wang, Kaohsiung, TW;

Assignees:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0335 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/76224 (2013.01);
Abstract

A method of fabricating a mask includes providing a substrate. A first material layer is disposed on the substrate. Then, the first material layer is partly removed. A second trench is formed between the remaining first material layer. The second trench includes a height. Later, a second material layer is formed to conformally fill in the second trench. The second material layer includes a thickness. The thickness of the second material layer equals the height of the second trench. Finally, part of the second material layer is removed, and the remaining second material layer and the remaining first material layer comprise a second mask.


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