The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Mar. 21, 2017
Tokyo Electron Limited, Tokyo, JP;
Hiroaki Ikegawa, Nirasaki, JP;
Jun Ogawa, Nirasaki, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A semiconductor device manufacturing method includes: a primary process of supplying a process gas to a substrate having a depression formed therein to form a third layer and filling the depression with the third layer, the substrate including a first layer whose surface is exposed as an upper surface of the substrate and a second layer formed in at least a sidewall of the depression having the sidewall and a floor surface; performing an etching process of etching the third layer to expose the upper surface, and halting the etching of the third layer while remaining the third layer formed within the depression; and performing a secondary process of supplying the process gas to the substrate to form the third layer so that the depression is filled with the third layer with no clearance.