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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10297441 B1

PDFFull Text
Date of Patent:
May. 21, 2019

Filed:

Aug. 10, 2017

Low-temperature atomic layer deposition of boron nitride and bn structures

Applicants:

Applied Materials, Inc., Santa Clara, CA (US);

The Regents of the University of California, Oakland, CA (US);

Inventors:

Steven Wolf, San Diego, CA (US);

Mary Edmonds, San Diego, CA (US);

Andrew C. Kummel, San Diego, CA (US);

Srinivas D. Nemani, Sunnyvale, CA (US);

Ellie Y. Yieh, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:

Patterson + Sheridan LLP

Primary Examiner:

David S Blum

Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/31 (2006.01); H01L 21/469 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 21/02 (2006.01); H01L 29/51 (2006.01); C23C 16/46 (2006.01); C23C 16/455 (2006.01); C23C 16/34 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02205 (2013.01); C23C 16/342 (2013.01); C23C 16/45527 (2013.01); C23C 16/45553 (2013.01); C23C 16/46 (2013.01); H01L 21/0228 (2013.01); H01L 21/02112 (2013.01); H01L 21/02175 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01);
Abstract

Methods of the disclosure include a BN ALD process at low temperatures using a reactive nitrogen precursor, such as thermal NH, and a boron containing precursor, which allows for the deposition of ultra thin (less than 5 nm) films with precise thickness and composition control. Methods are self-limiting and provide saturating atomic layer deposition (ALD) of a boron nitride (BN) layer on various semiconductors and metallic substrates.

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